Raman spectroscopy of Mg-doped gallium nitride: Shift of the A1(LO) phonon

J. C. Burton; S. Cohen; S. J. Lukacs; F. H. Long; S. Liang; Y. Lu; Y. Li; C. Tran

Raman spectroscopy of Mg-doped gallium nitride: Shift of the A₁(LO) phonon

J. C. Burton, S. Cohen, S. J. Lukacs, F. H. Long, S. Liang, Y. Lu, Y. Li, C. Tran

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The wavelength dependence of Mg-doped GaN Raman spectra for samples that have been annealed at different temperatures was studied on samples of p-type Mg doped GaN on sapphire substrates. The samples were prepared by means of low pressure MOCVD process. From one initial sample, four different samples were generated. One sample was analyzed as-grown, while the other three were each annealed under N₂ for four minutes at one of the following temperatures: 500 °C, 700 °C and 900 °C. The effects of thermal annealing on the A₁(LO) and E₂ phonons were examined.

Original language	English (US)
Pages (from-to)	56-57
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - 1997
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Raman spectroscopy of Mg-doped gallium nitride: Shift of the A1(LO) phonon",

abstract = "The wavelength dependence of Mg-doped GaN Raman spectra for samples that have been annealed at different temperatures was studied on samples of p-type Mg doped GaN on sapphire substrates. The samples were prepared by means of low pressure MOCVD process. From one initial sample, four different samples were generated. One sample was analyzed as-grown, while the other three were each annealed under N2 for four minutes at one of the following temperatures: 500 °C, 700 °C and 900 °C. The effects of thermal annealing on the A1(LO) and E2 phonons were examined.",

author = "Burton, {J. C.} and S. Cohen and Lukacs, {S. J.} and Long, {F. H.} and S. Liang and Y. Lu and Y. Li and C. Tran",

year = "1997",

language = "English (US)",

pages = "56--57",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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TY - JOUR

T1 - Raman spectroscopy of Mg-doped gallium nitride

T2 - Proceedings of the 1997 LEOS Summer Topical Meeting

AU - Burton, J. C.

AU - Cohen, S.

AU - Lukacs, S. J.

AU - Long, F. H.

AU - Liang, S.

AU - Lu, Y.

AU - Li, Y.

AU - Tran, C.

PY - 1997

Y1 - 1997

N2 - The wavelength dependence of Mg-doped GaN Raman spectra for samples that have been annealed at different temperatures was studied on samples of p-type Mg doped GaN on sapphire substrates. The samples were prepared by means of low pressure MOCVD process. From one initial sample, four different samples were generated. One sample was analyzed as-grown, while the other three were each annealed under N2 for four minutes at one of the following temperatures: 500 °C, 700 °C and 900 °C. The effects of thermal annealing on the A1(LO) and E2 phonons were examined.

AB - The wavelength dependence of Mg-doped GaN Raman spectra for samples that have been annealed at different temperatures was studied on samples of p-type Mg doped GaN on sapphire substrates. The samples were prepared by means of low pressure MOCVD process. From one initial sample, four different samples were generated. One sample was analyzed as-grown, while the other three were each annealed under N2 for four minutes at one of the following temperatures: 500 °C, 700 °C and 900 °C. The effects of thermal annealing on the A1(LO) and E2 phonons were examined.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030682988&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030682988

SN - 1099-4742

SP - 56

EP - 57

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

Y2 - 11 August 1997 through 15 August 1997

ER -

Raman spectroscopy of Mg-doped gallium nitride: Shift of the A₁(LO) phonon

Abstract

All Science Journal Classification (ASJC) codes

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