Raman spectroscopy of Mg-doped gallium nitride: Shift of the A1(LO) phonon

J. C. Burton, S. Cohen, S. J. Lukacs, F. H. Long, S. Liang, Y. Lu, Y. Li, C. Tran

Research output: Contribution to journalConference articlepeer-review


The wavelength dependence of Mg-doped GaN Raman spectra for samples that have been annealed at different temperatures was studied on samples of p-type Mg doped GaN on sapphire substrates. The samples were prepared by means of low pressure MOCVD process. From one initial sample, four different samples were generated. One sample was analyzed as-grown, while the other three were each annealed under N2 for four minutes at one of the following temperatures: 500 °C, 700 °C and 900 °C. The effects of thermal annealing on the A1(LO) and E2 phonons were examined.

Original languageEnglish (US)
Pages (from-to)56-57
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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