Rapid thermal diffusion of zinc into GaAs

Yicheng C. Lu, T. S. Kalkur, C. A. Paz De Araujo

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Rapid thermal diffusion of zinc into semi-insulating GaAs from spin-on Zn doped silica film was performed. Spin-on films act both as Zn diffusion sources and GaAs surface encapsulant layer against decomposition during the rapid thermal diffusion. The very shallow p + layers were obtained at a diffusion temperature of 900° C for 5 sec. Non-alloyed ohmic contacts to these p + layers were achieved with an average contact resistivity of 2.4 × 10-6 Ω cm2. The interface is very smooth. The zinc diffusion coefficient for rapid thermal diffusion with effective diffusion time of 6 sec at 900° C was numerically calculated from SIMS profiles. In contrast to the common Longini-Weisberg-Blanc model, the rapid thermal diffusion is under nonequilibrium condition. Complications due to interstitial-substitutional nonequilibrium, vacancy supply resulted from the interface stress field, and zinc precipitation are briefly discussed.

Original languageEnglish (US)
Pages (from-to)29-34
Number of pages6
JournalJournal of Electronic Materials
Volume19
Issue number1
DOIs
StatePublished - Jan 1 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • GaAs
  • Rapid thermal diffusion
  • Zn diffusion

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