Chlorine was used to carry out the reactive ion etching (RIE) of GaAs. At 5 m Torr pressure and 270 V bias, it was found to etch at a rate greater than 1 mu /min, and produced features having vertical sidewalls and a clean substrate surface. The mechanism of chlorine RIE of GaAs was studied by examining etch rates and profiles obtained using pages of different mixtures of chlorine and argon. The results are consonant with proposed mechanisms of GaAs etching by chlorine in both the plasma and reactive ion beam etching regimes.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 1984|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering