REACTIVE ION ETCHING OF GaAs IN A CHLORINE PLASMA.

E. L. Hu, R. E. Howard

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

Chlorine was used to carry out the reactive ion etching (RIE) of GaAs. At 5 m Torr pressure and 270 V bias, it was found to etch at a rate greater than 1 mu /min, and produced features having vertical sidewalls and a clean substrate surface. The mechanism of chlorine RIE of GaAs was studied by examining etch rates and profiles obtained using pages of different mixtures of chlorine and argon. The results are consonant with proposed mechanisms of GaAs etching by chlorine in both the plasma and reactive ion beam etching regimes.

Original languageEnglish (US)
Pages (from-to)85-88
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number1
DOIs
StatePublished - Jan 1 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'REACTIVE ION ETCHING OF GaAs IN A CHLORINE PLASMA.'. Together they form a unique fingerprint.

Cite this