Reactive ion etching of LiNbO3

J. L. Jackel; R. E. Howard; E. L. Hu; S. P. Lyman

doi:10.1063/1.92177

Reactive ion etching of LiNbO₃

J. L. Jackel, R. E. Howard, E. L. Hu, S. P. Lyman

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Abstract

We describe the reactive ion etching of LiNbO₃ in gas mixtures containing CCl₂F₂, CF₄, O₂, and Ar. The effects of gas composition and pressure, in the range 1-10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of LiNbO₃ for electro-optic and acoustic-optic devices.

Original language	English (US)
Pages (from-to)	907-909
Number of pages	3
Journal	Applied Physics Letters
Volume	38
Issue number	11
DOIs	https://doi.org/10.1063/1.92177
State	Published - 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.92177

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title = "Reactive ion etching of LiNbO3",

abstract = "We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1-10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 {\AA}) with control of etch profiles, we expect the process to be used for three-dimensional patterning of LiNbO3 for electro-optic and acoustic-optic devices.",

author = "Jackel, {J. L.} and Howard, {R. E.} and Hu, {E. L.} and Lyman, {S. P.}",

year = "1981",

doi = "10.1063/1.92177",

language = "English (US)",

volume = "38",

pages = "907--909",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Reactive ion etching of LiNbO3

AU - Jackel, J. L.

AU - Howard, R. E.

AU - Hu, E. L.

AU - Lyman, S. P.

PY - 1981

Y1 - 1981

N2 - We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1-10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of LiNbO3 for electro-optic and acoustic-optic devices.

AB - We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1-10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of LiNbO3 for electro-optic and acoustic-optic devices.

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U2 - 10.1063/1.92177

DO - 10.1063/1.92177

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

Reactive ion etching of LiNbO₃

Abstract

All Science Journal Classification (ASJC) codes

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