Reactive ion etching of LiNbO3

J. L. Jackel, R. E. Howard, E. L. Hu, S. P. Lyman

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1-10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of LiNbO3 for electro-optic and acoustic-optic devices.

Original languageEnglish (US)
Pages (from-to)907-909
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Reactive ion etching of LiNbO3'. Together they form a unique fingerprint.

Cite this