Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline Ca Cu3 Ti4 O12

S. V. Kalinin, J. Shin, G. M. Veith, A. P. Baddorf, M. V. Lobanov, H. Runge, M. Greenblatt

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

The origins of an ultrahigh dielectric constant in polycrystalline Ca Cu3 Ti4 O12 (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz-1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrast in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior.

Original languageEnglish (US)
Article number102902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline Ca Cu3 Ti4 O12'. Together they form a unique fingerprint.

Cite this