Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1-x)2Te3 Thin Film Grown on CrGeTe3 Substrate

Xiong Yao, Bin Gao, Myung Geun Han, Deepti Jain, Jisoo Moon, Jae Wook Kim, Yimei Zhu, Sang Wook Cheong, Seongshik Oh

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Abstract

Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3 (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe3 (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.

Original languageEnglish (US)
Pages (from-to)4567-4573
Number of pages7
JournalNano Letters
Volume19
Issue number7
DOIs
Publication statusPublished - Jul 10 2019

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • (BiSb)Te
  • CrGeTe
  • Magnetic proximity effect
  • anomalous Hall effect
  • magnetic topological insulator

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