Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

Z. C. Feng; S. J. Chua; K. Tone; J. H. Zhao

doi:10.1063/1.124412

Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

Z. C. Feng, S. J. Chua, K. Tone, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.

Original language	English (US)
Pages (from-to)	472-474
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	4
DOIs	https://doi.org/10.1063/1.124412
State	Published - Jul 26 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124412

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title = "Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements",

abstract = "Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.",

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T1 - Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

AU - Feng, Z. C.

AU - Chua, S. J.

AU - Tone, K.

AU - Zhao, J. H.

PY - 1999/7/26

Y1 - 1999/7/26

N2 - Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.

AB - Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.

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Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

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