Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jul 26 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)