Refractive index data from Gax In1−x Asy P1−y films

P. Chandra, L. A. Coldren, K. E. Strege

Research output: Contribution to journalArticle

69 Scopus citations

Abstract

We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.

Original languageEnglish (US)
Pages (from-to)6-7
Number of pages2
JournalElectronics Letters
Volume17
Issue number1
DOIs
StatePublished - Jan 8 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Optical properties
  • Refractive index
  • Semiconductors (III–V)

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