Abstract
We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6-7 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 17 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 8 1981 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Keywords
- Optical properties
- Refractive index
- Semiconductors (III–V)
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Chandra, P., Coldren, L. A., & Strege, K. E. (1981). Refractive index data from Gax In1−x Asy P1−y films. Electronics Letters, 17(1), 6-7. https://doi.org/10.1049/el:19810005