Refractive index data from Gax In1−x Asy P1−y films

P. Chandra; L. A. Coldren; K. E. Strege

doi:10.1049/el:19810005

Refractive index data from Ga_x In_1−x As_y P_1−y films

P. Chandra, L. A. Coldren, K. E. Strege

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.

Original language	English (US)
Pages (from-to)	6-7
Number of pages	2
Journal	Electronics Letters
Volume	17
Issue number	1
DOIs	https://doi.org/10.1049/el:19810005
State	Published - Jan 8 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Optical properties
Refractive index
Semiconductors (III–V)

Access to Document

10.1049/el:19810005

Cite this

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title = "Refractive index data from Gax In1−x Asy P1−y films",

abstract = "We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.",

keywords = "Optical properties, Refractive index, Semiconductors (III–V)",

author = "P. Chandra and Coldren, {L. A.} and Strege, {K. E.}",

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AU - Coldren, L. A.

AU - Strege, K. E.

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N2 - We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.

AB - We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.

KW - Optical properties

KW - Refractive index

KW - Semiconductors (III–V)

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