We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Optical properties
- Refractive index
- Semiconductors (III–V)