Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhancement of photoresponse and post-growth selectivity of the resonant wavelength have been realized. The photodetectors have shown record setting room temperature performance with a maximum quantum efficiency of η = 85%, a peak responsivity of R = 1.3 A/W and a detectivity D* of 1.35 × 1010 cm Hz 1/2 W-1 at -0.5-V bias at resonant wavelength.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering