Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications

K. Xie, J. H. Zhao, Y. Shi, H. Lee, G. Olsen

Research output: Contribution to journalArticle

13 Scopus citations


Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhancement of photoresponse and post-growth selectivity of the resonant wavelength have been realized. The photodetectors have shown record setting room temperature performance with a maximum quantum efficiency of η = 85%, a peak responsivity of R = 1.3 A/W and a detectivity D* of 1.35 × 1010 cm Hz 1/2 W-1 at -0.5-V bias at resonant wavelength.

Original languageEnglish (US)
Pages (from-to)667-669
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number5
StatePublished - May 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications'. Together they form a unique fingerprint.

  • Cite this