RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate

Guoxuan Qin, Hao Chih Yuan, George K. Celler, Weidong Zhou, Jianguo Ma, Zhenqiang Ma

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parameters (i.e. resistance, inductance, etc.) are effectively reduced, and the flexible PIN diodes achieve good high-frequency response. With consideration of the flexible device fabrication, structure and layout configuration, a RF model of the microwave single-crystalline Si nanomembrane PIN diodes on plastic substrate is presented. The RF/microwave equivalent circuit model achieves good agreement with the experimental results of the single-crystalline SiNM PIN diodes with different diode areas, and reveals the most influential factors to flexible diode characteristics. The study provides guidelines for properly designing and using single-crystalline SiNMs for flexible RF/microwave diodes and demonstrates the great possibility of flexible monolithic microwave integrated systems.

Original languageEnglish (US)
Pages (from-to)509-514
Number of pages6
JournalMicroelectronics Journal
Issue number3
StatePublished - Mar 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


  • Flexible PIN diode
  • Microwave
  • Modeling
  • Nanomembrane
  • Plastic substrate
  • Radio frequency (RF)
  • Single-crystalline silicon


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