Abstract
This paper reports the realization and radio frequency (RF) modeling of flexible microwave switches (as a simple circuit example) employing single-crystal silicon nanomembranes (SiNMs) on plastic substrates. High-energy, high-dose ion implantation and high-temperature annealing are performed before the nanomembrane release and transfer process, enabling good high-frequency response of the flexible switches. RF/microwave models of the microwave single-crystal SiNM switches on plastic substrate are developed. The model shows good agreement with the experimental results with different switch areas and under different operation conditions. The factors that are most influential with respect to flexible switch characteristics are revealed. The study demonstrates that single-crystal SiNM microwave switches can be fabricated and accurately modeled for high-performance, flexible, monolithic microwave integrated systems.
Original language | English (US) |
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Pages (from-to) | 21-25 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 95 |
DOIs | |
State | Published - Jul 2012 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Keywords
- Flexible switch
- Microwave
- Modeling
- Nanomembrane
- Plastic substrate
- Radio frequency (RF)
- Single-crystal silicon