Barium zirconium sulfides, Ba2ZrS4 and Ba3Zr2S7, were prepared by a novel precursor method. Ba2ZrS4 forms in the K2NiF4-type tetragonal ( I4 mmm) structure with a = 4.8379(5) A ̊ and c = 15.916(2) A ̊. Ba3Zr2S7 forms in a distorted variant of the Ba3Zr2O7 Ruddlesden-Popper-type orthorhombic (Cccm) structure with a = 7.067(1) A ̊, b = 25.557(4) A ̊ and c = 7.059(1) A ̊ Four probe electrical resistivity measurements show that the Ban + 1ZrnS2n + 1 (n = 1, 2, ∞) phases are semiconducting. The conductivity increases with increasing n. Seebeck measurements show that the majority charge carriers are holes. X-Ray absorption spectroscopy (XAS) measurements probing the electronic structure of these materials as viewed from the S and Zr sites are also discussed.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
- Electronic structure
- Ruddlesden-Popper zirconium sulfides