Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC

Yanbin Luo, Feng Yan Feng, Kiyoshi Tone, Jian H. Zhao, John Crofton

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

To search for device processing compatible ohmic contacts to mid-1020 cm-3 Al+C co-implanted p-type 4H-SiC, Ti and layered Ti, Al and layered Al, Pd and layered Pd metal systems have been studied. Aluminum based contacts give the lowest specific contact resistance with a median value of 4.7×10-5 Ω·cm2. However, Al requires a high annealing temperature and is easily oxidized, making it difficult to get a device processing compatible Al contact. Efforts have been made to see if any metal over-layer could be used to solve the problem and the results are reported. Titanium covered by W has high 10-4 Ω·cm2 specific contact resistance. When covered by Al, Ti/Al contact gives a better specific contact resistance of 1.4×10-4 Ω·cm2. But Al tends to get oxidized during annealing in a conventional annealing furnace. Palladium is attractive because of its low annealing temperature and high resistance to oxidation with a reasonably good specific contact resistance of high 10-5 Ω·cm2. Pd and layered Pd contacts may be further improved to provide device processing compatible ohmic contacts to p-type 4H-SiC.

Original languageEnglish (US)
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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