Seeded oscillatory growth of Si over SiO2 by cw laser irradiation

G. K. Celler, L. E. Trimble, K. K. Ng, H. J. Leamy, H. Baumgart

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

Original languageEnglish (US)
Pages (from-to)1043-1045
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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