Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1982|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)