Seeded oscillatory growth of Si over SiO2 by cw laser irradiation

G. K. Celler; L. E. Trimble; K. K. Ng; H. J. Leamy; H. Baumgart

doi:10.1063/1.92998

Seeded oscillatory growth of Si over SiO₂ by cw laser irradiation

G. K. Celler, L. E. Trimble, K. K. Ng, H. J. Leamy, H. Baumgart

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22 Scopus citations

Abstract

Extensive seeded epitaxial growth of crystalline Si over SiO₂ was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO₂ film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

Original language	English (US)
Pages (from-to)	1043-1045
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1063/1.92998
State	Published - 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.92998

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title = "Seeded oscillatory growth of Si over SiO2 by cw laser irradiation",

abstract = "Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.",

author = "Celler, {G. K.} and Trimble, {L. E.} and Ng, {K. K.} and Leamy, {H. J.} and H. Baumgart",

year = "1982",

doi = "10.1063/1.92998",

language = "English (US)",

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pages = "1043--1045",

journal = "Applied Physics Letters",

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T1 - Seeded oscillatory growth of Si over SiO2 by cw laser irradiation

AU - Celler, G. K.

AU - Trimble, L. E.

AU - Ng, K. K.

AU - Leamy, H. J.

AU - Baumgart, H.

PY - 1982

Y1 - 1982

N2 - Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

AB - Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

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Seeded oscillatory growth of Si over SiO₂ by cw laser irradiation

Abstract

All Science Journal Classification (ASJC) codes

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