Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers

G. K. Celler; McD Robinson; D. J. Lischner

doi:10.1063/1.93741

Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers

G. K. Celler, McD Robinson, D. J. Lischner

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO₂ is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si-on-insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water-cooled base, allowing uniform and bow-free crystallization of complete 3-in. wafers in ∼60 s.

Original language	English (US)
Pages (from-to)	99-101
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	1
DOIs	https://doi.org/10.1063/1.93741
State	Published - 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.93741

Cite this

@article{e277e46642ef43d293ab7a210566a1a2,

title = "Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers",

abstract = "The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO2 is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si-on-insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water-cooled base, allowing uniform and bow-free crystallization of complete 3-in. wafers in ∼60 s.",

author = "Celler, {G. K.} and McD Robinson and Lischner, {D. J.}",

year = "1983",

doi = "10.1063/1.93741",

language = "English (US)",

volume = "42",

pages = "99--101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers

AU - Celler, G. K.

AU - Robinson, McD

AU - Lischner, D. J.

PY - 1983

Y1 - 1983

N2 - The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO2 is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si-on-insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water-cooled base, allowing uniform and bow-free crystallization of complete 3-in. wafers in ∼60 s.

AB - The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO2 is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si-on-insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water-cooled base, allowing uniform and bow-free crystallization of complete 3-in. wafers in ∼60 s.

UR - http://www.scopus.com/inward/record.url?scp=27944476746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944476746&partnerID=8YFLogxK

U2 - 10.1063/1.93741

DO - 10.1063/1.93741

M3 - Article

AN - SCOPUS:27944476746

SN - 0003-6951

VL - 42

SP - 99

EP - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this