Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers

G. K. Celler, McD Robinson, D. J. Lischner

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The first successful seeded recrystallization of thick, >10 μm Si films deposited on SiO2 is reported. A method of lateral epitaxial growth over oxide (LEGO) has been developed, in which the thick polycrystalline Si films are completely melted by intense photon flux. The epitaxial recrystallization which follows starts at the seeding regions, spaced as far as 1 mm apart, and results in single crystalline Si-on-insulator with a low density of defects. The process is carried out in a special furnace with samples placed between a bank of tungsten halogen lamps and a water-cooled base, allowing uniform and bow-free crystallization of complete 3-in. wafers in ∼60 s.

Original languageEnglish (US)
Pages (from-to)99-101
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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