@inproceedings{0006f0c2f1794b0e891b5129b5882538,
title = "SiC solid-state disconnect for high power system applications",
abstract = "This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.",
keywords = "Circuit breaker, Depletion-mode JFET, Solid-state disconnect, Surge current protection",
author = "Xueqing Li and Petre Alexandrov and Leonid Fursin and Christopher Dries and Zhao, {Jian H.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1249",
language = "English (US)",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1249--1252",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}