SiCl 4-based reactive ion etching of ZnO and Mg xZn 1-xO films on r-sapphire substrates

J. Zhu, G. Saraf, J. Zhong, H. F. Sheng, B. V. Yakshinskiy, Y. Lu

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5 Scopus citations


SiCl 4-based reactive ion etching (RIE) is used to etch Mg xZn 1-xO (0 ≤ x ≤ 0.3) films grown on r-plane sapphire substrates. The RIE etch rates are investigated as a function of Mg composition, RIE power, and chamber pressure. SiO 2 is used as the etching mask to achieve a good etching profile. In comparison with wet chemical etching, the in-plane etching anisotropy of Mg xZn 1-xO (0 ≤ x ≤ 0.3) films is reduced in RIE. X-ray photoelectron spectroscopy measurements show that there is no Si and Cl contamination detected at the etched surface under the current RIE conditions. The influence of the RIE to the optical properties has been investigated.

Original languageEnglish (US)
Pages (from-to)1311-1315
Number of pages5
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Mg Zn O
  • Reactive ion etching (RIE)
  • SiCl


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