SiGe profile optimization for improved cryogenic operation at high injection

Yan Cui, Guofu Niu, Yun Shi, Chendong Zhu, Laleh Najafizadeh, John D. Cressler, Alvin Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.

Original languageEnglish (US)
Title of host publication2006 Bipolar/BiCMOS Circuits and Technology Meeting
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 Bipolar/BiCMOS Circuits and Technology Meeting - Maastricht, Netherlands
Duration: Sep 10 2006Sep 13 2006

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Other

Other2006 Bipolar/BiCMOS Circuits and Technology Meeting
Country/TerritoryNetherlands
CityMaastricht
Period9/10/069/13/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Cryogenic electronics
  • Extreme environment electronics
  • SiGe HBT device physics
  • Sige profile optimization

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