TY - GEN
T1 - SiGe profile optimization for improved cryogenic operation at high injection
AU - Cui, Yan
AU - Niu, Guofu
AU - Shi, Yun
AU - Zhu, Chendong
AU - Najafizadeh, Laleh
AU - Cressler, John D.
AU - Joseph, Alvin
PY - 2006
Y1 - 2006
N2 - This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.
AB - This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.
KW - Cryogenic electronics
KW - Extreme environment electronics
KW - SiGe HBT device physics
KW - Sige profile optimization
UR - http://www.scopus.com/inward/record.url?scp=39049093059&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=39049093059&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2006.311143
DO - 10.1109/BIPOL.2006.311143
M3 - Conference contribution
AN - SCOPUS:39049093059
SN - 1424404584
SN - 9781424404582
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
BT - 2006 Bipolar/BiCMOS Circuits and Technology Meeting
T2 - 2006 Bipolar/BiCMOS Circuits and Technology Meeting
Y2 - 10 September 2006 through 13 September 2006
ER -