SiGe profile optimization for improved cryogenic operation at high injection

Yan Cui; Guofu Niu; Yun Shi; Chendong Zhu; Laleh Najafizadeh; John D. Cressler; Alvin Joseph

doi:10.1109/BIPOL.2006.311143

SiGe profile optimization for improved cryogenic operation at high injection

Yan Cui, Guofu Niu, Yun Shi, Chendong Zhu, Laleh Najafizadeh, John D. Cressler, Alvin Joseph

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection f_T is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved f_T and β at high injection.

Original language	English (US)
Title of host publication	2006 Bipolar/BiCMOS Circuits and Technology Meeting
DOIs	https://doi.org/10.1109/BIPOL.2006.311143
State	Published - 2006
Externally published	Yes
Event	2006 Bipolar/BiCMOS Circuits and Technology Meeting - Maastricht, Netherlands Duration: Sep 10 2006 → Sep 13 2006

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Other

Other	2006 Bipolar/BiCMOS Circuits and Technology Meeting
Country/Territory	Netherlands
City	Maastricht
Period	9/10/06 → 9/13/06

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Cryogenic electronics
Extreme environment electronics
SiGe HBT device physics
Sige profile optimization

Access to Document

10.1109/BIPOL.2006.311143

Cite this

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title = "SiGe profile optimization for improved cryogenic operation at high injection",

abstract = "This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.",

keywords = "Cryogenic electronics, Extreme environment electronics, SiGe HBT device physics, Sige profile optimization",

author = "Yan Cui and Guofu Niu and Yun Shi and Chendong Zhu and Laleh Najafizadeh and Cressler, {John D.} and Alvin Joseph",

year = "2006",

doi = "10.1109/BIPOL.2006.311143",

language = "English (US)",

isbn = "1424404584",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

booktitle = "2006 Bipolar/BiCMOS Circuits and Technology Meeting",

note = "2006 Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 10-09-2006 Through 13-09-2006",

}

Cui, Y, Niu, G, Shi, Y, Zhu, C, Najafizadeh, L, Cressler, JD & Joseph, A 2006, SiGe profile optimization for improved cryogenic operation at high injection. in 2006 Bipolar/BiCMOS Circuits and Technology Meeting., 4100211, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Bipolar/BiCMOS Circuits and Technology Meeting, Maastricht, Netherlands, 9/10/06. https://doi.org/10.1109/BIPOL.2006.311143

TY - GEN

T1 - SiGe profile optimization for improved cryogenic operation at high injection

AU - Cui, Yan

AU - Niu, Guofu

AU - Shi, Yun

AU - Zhu, Chendong

AU - Najafizadeh, Laleh

AU - Cressler, John D.

AU - Joseph, Alvin

PY - 2006

Y1 - 2006

N2 - This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.

AB - This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and β at high injection.

KW - Cryogenic electronics

KW - Extreme environment electronics

KW - SiGe HBT device physics

KW - Sige profile optimization

UR - http://www.scopus.com/inward/record.url?scp=39049093059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39049093059&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2006.311143

DO - 10.1109/BIPOL.2006.311143

M3 - Conference contribution

AN - SCOPUS:39049093059

SN - 1424404584

SN - 9781424404582

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

BT - 2006 Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 2006 Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 10 September 2006 through 13 September 2006

ER -

SiGe profile optimization for improved cryogenic operation at high injection

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

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