Silicon-based nanomembrane materials: The ultimate in strain engineering

Hao Chih Yuan, Michelle M. Roberts, Pengpeng Zhang, Byoung Nam Park, Levente J. Klein, Donald E. Savage, Frank S. Flack, Zhenqiang Ma, Paul G. Evans, Mark A. Eriksson, George K. Celler, Max G. Eagally

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The lattice-mismatch-induced strain in growth of Ge on Si produces a host of exciting scientific and technological consequences, both in 3D nanostructure formation and, when silicon-on-insulator (SOI) is used as a substrate, in 2D membrane fabrication. One can use the ideas of strain sharing and critical thickness, combined with the ability to release the top layers of SOI, to create free-standing, dislocation-free, elastically strain relieved flexible Si/Ge membranes with nanometer scale thickness, which we call NanoFLEXSi or Si nanomembranes (SiNMs). The membranes can be transferred to new substrates, producing the potential for novel heterogeneous integration. The very interesting, and in some cases surprising, structural and electronic properties of these very thin membranes have been revealed using STM, x-ray diffraction, and electronic transport measurements. For example, STM shows that conduction in very thin Si layers on SOI with bulk-Si mobilities is possible even though the membrane is bulk depleted. Using the effect of elastic strain, we have fabricated two-dimensional electron gases (2DEGs) in membrane structures; we support the transport measurements with calculations suggesting that we are observing a single bound state in the well. We have fabricated thin-film transistors (TFTs) that we have transferred to flexible-polymer hosts that show a very high saturation current and transconductance. Thus very high-speed flexible electronics over large areas become possible.

Original languageEnglish (US)
Title of host publication2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages327-333
Number of pages7
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
Duration: Jan 18 2006Jan 20 2006

Publication series

Name2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume2006

Other

Other2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country/TerritoryUnited States
CitySan Diego, CA
Period1/18/061/20/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • 2DEG
  • Elastic strain relief
  • Flexible electronics
  • Si nanomembrane
  • Strained Si
  • Thin-film transistor

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