Silicon carbide power field-effect transistors

Jian H. Zhao

doi:10.1557/mrs2005.76

Silicon carbide power field-effect transistors

Jian H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

Original language	English (US)
Pages (from-to)	293-298
Number of pages	6
Journal	MRS Bulletin
Volume	30
Issue number	4
DOIs	https://doi.org/10.1557/mrs2005.76
State	Published - Apr 2005

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Physical and Theoretical Chemistry

Keywords

Field-effect transistors
MOSFETs
Metal oxide semiconductor field-effect transistors
Power switching
Silicon carbide
VJFETs
Vertical-junction field-effect transistors

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10.1557/mrs2005.76

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abstract = "Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.",

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N2 - Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

AB - Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

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KW - MOSFETs

KW - Metal oxide semiconductor field-effect transistors

KW - Power switching

KW - Silicon carbide

KW - VJFETs

KW - Vertical-junction field-effect transistors

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Silicon carbide power field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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