Abstract
Ion beam synthesis of a buried SiO//2 layer is an attractive silicon-on-insulator (SOI) technology for high speed CMOS circuits and radiation hardened devices. Recent progress in achieving high quality SOI structures, essentially free of oxygen precipitates and with sharp interfaces between the Si and the SiO//2, is reviewed.
| Original language | English (US) |
|---|---|
| Pages | 93-98 |
| Number of pages | 6 |
| Volume | 30 |
| No | 3 |
| Specialist publication | Solid State Technology |
| State | Published - Mar 1987 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry