Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/Vs

V. Podzorov; S. E. Sysoev; E. Loginova; V. M. Pudalov; M. E. Gershenson

doi:10.1063/1.1622799

Single-crystal organic field effect transistors with the hole mobility ∼8 cm²/Vs

V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, M. E. Gershenson

School of Arts and Sciences, Physics & Astronomy

Research output: Contribution to journal › Article › peer-review

397 Scopus citations

Abstract

Single-crystal organic field effect transistors (OFET) with the hole mobility ∼8 cm²/V s were studied. The mobility for the single-crystal devices was nearly independent of the gate voltage and the field effect onset was very sharp. Results showed that for a gate insulator capacitance of 2±0.2 nF/cm², the subthreshold slope as small as 0.85 V/decade was observed.

Original language	English (US)
Pages (from-to)	3504-3506
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1622799
State	Published - Oct 27 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1622799

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abstract = "Single-crystal organic field effect transistors (OFET) with the hole mobility ∼8 cm2/V s were studied. The mobility for the single-crystal devices was nearly independent of the gate voltage and the field effect onset was very sharp. Results showed that for a gate insulator capacitance of 2±0.2 nF/cm2, the subthreshold slope as small as 0.85 V/decade was observed.",

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AU - Podzorov, V.

AU - Sysoev, S. E.

AU - Loginova, E.

AU - Pudalov, V. M.

AU - Gershenson, M. E.

PY - 2003/10/27

Y1 - 2003/10/27

N2 - Single-crystal organic field effect transistors (OFET) with the hole mobility ∼8 cm2/V s were studied. The mobility for the single-crystal devices was nearly independent of the gate voltage and the field effect onset was very sharp. Results showed that for a gate insulator capacitance of 2±0.2 nF/cm2, the subthreshold slope as small as 0.85 V/decade was observed.

AB - Single-crystal organic field effect transistors (OFET) with the hole mobility ∼8 cm2/V s were studied. The mobility for the single-crystal devices was nearly independent of the gate voltage and the field effect onset was very sharp. Results showed that for a gate insulator capacitance of 2±0.2 nF/cm2, the subthreshold slope as small as 0.85 V/decade was observed.

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Single-crystal organic field effect transistors with the hole mobility ∼8 cm²/Vs

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