Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology

Adilson S. Cardoso, Partha S. Chakraborty, Nedeljko Karaulac, David M. Fleischhauer, Nelson E. Lourenco, Zachary E. Fleetwood, Anup P. Omprakash, Troy D. England, Seungwoo Jung, Laleh Najafizadeh, Nicolas J.H. Roche, Ani Khachatrian, Jeffrey H. Warner, Dale McMorrow, Stephen P. Buchner, En Xia Zhang, Cher Xuan Zhang, Michael W. McCurdy, Robert A. Reed, Daniel M. FleetwoodPauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

This paper presents an investigation of the impact of single-event transients (SETs) and total ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation, 90-nm SiGe BiCMOS technology. A first-order uncompensated bandgap reference (BGR) circuit is used to benchmark the SET and TID responses of these voltage reference circuits (VRCs). Based on the first-order BGR radiation response, new circuit-level radiation-hardening-by-design (RHBD) techniques are proposed. An RHBD technique using inverse-mode (IM) transistors is demonstrated in a BGR circuit. In addition, a PIN diode VRC is presented as a potential SET and TID tolerant, circuit-level RHBD alternative.

Original languageEnglish (US)
Article number6935017
Pages (from-to)3210-3217
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Keywords

  • Bandgap reference (BGR)
  • PIN diode
  • SiGe heterojunction bipolar transistors (HBTs)
  • biCMOS circuits
  • precision voltage reference
  • radiation
  • radiation hardening by design
  • single-event transient (SET)
  • total ionizing dose (TID)
  • transient radiation effects
  • transient response

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