SOI materials and devices

Sorin Cristoloveanu, George K. Celler

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

Silicon-on-insulator (SOI) technology was initiated almost half a century ago for the fabrication of radiation-hard circuits. During 1970s and 1980s several SOI materials and structures were conceived for dielectrically separating the thin, active device volume from the silicon substrate [1,2]. The background idea is that in a bulk silicon MOS transistor, only a superficial layer approximately 100-nm thick is actually useful for electron transport, whereas the substrate causes undesirable effects. An example of a transistor made in SOI is shown in Figure 4.1 [3].

Original languageEnglish (US)
Title of host publicationHandbook of Semiconductor Manufacturing Technology, Second Edition
PublisherCRC Press
Pages4-1-4-52
ISBN (Electronic)9781420017663
ISBN (Print)1574446754, 9781574446753
StatePublished - Jan 1 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Cristoloveanu, S., & Celler, G. K. (2007). SOI materials and devices. In Handbook of Semiconductor Manufacturing Technology, Second Edition (pp. 4-1-4-52). CRC Press.