Silicon-on-insulator (SOI) technology was initiated almost half a century ago for the fabrication of radiation-hard circuits. During 1970s and 1980s several SOI materials and structures were conceived for dielectrically separating the thin, active device volume from the silicon substrate [1,2]. The background idea is that in a bulk silicon MOS transistor, only a superﬁcial layer approximately 100-nm thick is actually useful for electron transport, whereas the substrate causes undesirable effects. An example of a transistor made in SOI is shown in Figure 4.1 .
|Original language||English (US)|
|Title of host publication||Handbook of Semiconductor Manufacturing Technology, Second Edition|
|ISBN (Print)||1574446754, 9781574446753|
|State||Published - Jan 1 2007|
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