Solid-state disconnects based on SiC power JFETs

P. Alexandrov, X. Li, L. Fursin, C. Dries, Jian Zhao, T. Burke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

Original languageEnglish (US)
Title of host publication2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011
DOIs
StatePublished - Nov 7 2011
Event7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011 - Chicago, IL, United States
Duration: Sep 6 2011Sep 9 2011

Publication series

Name2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011

Other

Other7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011
CountryUnited States
CityChicago, IL
Period9/6/119/9/11

All Science Journal Classification (ASJC) codes

  • Automotive Engineering

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    Alexandrov, P., Li, X., Fursin, L., Dries, C., Zhao, J., & Burke, T. (2011). Solid-state disconnects based on SiC power JFETs. In 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011 [6043095] (2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011). https://doi.org/10.1109/VPPC.2011.6043095