Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator

Erica Kotta, Lin Miao, Yishuai Xu, S. Alexander Breitweiser, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Wenhan Zhang, Weida Wu, Takehito Suzuki, Joseph Checkelsky, L. Andrew Wray

Research output: Contribution to journalLetterpeer-review

8 Scopus citations


Topological insulators are bulk semiconductors that manifest in-gap surface states with massless Dirac-like dispersion due to the topological bulk-boundary correspondence principle1–3. These surface states can be manipulated by the interface environment to display various emergent phenomena4–11. Here, we use angle-resolved photoemission spectroscopy and scanning tunnelling microscopy to investigate the interplay of crystallographic inhomogeneity with the topologically ordered band structure in a model topological insulator. We develop quantitative analysis methods to obtain spectroscopic information, in spite of a limited dwell time on each measured point. We find that the band energies vary on the scale of 50 meV across the sample surface, and this enables single sample measurements that are analogous to a multi-sample doping series. By focusing separately on the bulk and surface electrons we reveal a hybridization-like interplay between fluctuations in the surface and bulk state energetics.

Original languageEnglish (US)
Pages (from-to)285-289
Number of pages5
JournalNature Physics
Issue number3
StatePublished - Mar 1 2020

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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