Stabilization of boron carbide via silicon doping

J. E. Proctor, V. Bhakhri, R. Hao, T. J. Prior, T. Scheler, E. Gregoryanz, M. Chhowalla, F. Giulani

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

Original languageEnglish (US)
Article number015401
JournalJournal of Physics Condensed Matter
Volume27
Issue number1
DOIs
StatePublished - Jan 14 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • Amorphization
  • Boron carbide
  • Ceramics
  • High pressure

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