Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

N. Mathews; D. Fichou; E. Menard; V. Podzorov; S. G. Mhaisalkar

doi:10.1063/1.2807838

Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

N. Mathews, D. Fichou, E. Menard, V. Podzorov, S. G. Mhaisalkar

School of Arts and Sciences, New High Energy Theory Center

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

Original language	English (US)
Article number	212108
Journal	Applied Physics Letters
Volume	91
Issue number	21
DOIs	https://doi.org/10.1063/1.2807838
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2807838

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title = "Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors",

abstract = "We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.",

author = "N. Mathews and D. Fichou and E. Menard and V. Podzorov and Mhaisalkar, {S. G.}",

note = "Funding Information: We thank Prof. J. A. Rogers (University of Illinois) and Prof. M. E. Gershenson (Rutgers University) for valuable discussions. N. M. acknowledges the financial support of the Embassy of France in Singapore for a Merlion Program and the Agency for Science, Technology and Research of Singapore.",

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doi = "10.1063/1.2807838",

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journal = "Applied Physics Letters",

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T1 - Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

AU - Mathews, N.

AU - Fichou, D.

AU - Menard, E.

AU - Podzorov, V.

AU - Mhaisalkar, S. G.

N1 - Funding Information: We thank Prof. J. A. Rogers (University of Illinois) and Prof. M. E. Gershenson (Rutgers University) for valuable discussions. N. M. acknowledges the financial support of the Embassy of France in Singapore for a Merlion Program and the Agency for Science, Technology and Research of Singapore.

PY - 2007

Y1 - 2007

N2 - We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

AB - We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

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Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

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