Strain-modulated Mott transition in EuNiO3 ultrathin films

D. Meyers, S. Middey, M. Kareev, M. Van Veenendaal, E. J. Moon, B. A. Gray, Jian Liu, J. W. Freeland, J. Chakhalian

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29 Scopus citations


A series of ultrathin epitaxial films of EuNiO3 (ENO) were grown on a set of substrates traversing from compressive (-2.4%) to tensile (+2.5%) lattice mismatch. On moving from tensile to compressive strain, transport measurements demonstrate a successively suppressed Mott insulating behavior eventually resulting in a complete suppression of the insulating state at high compressive strain. Corroborating these findings, resonant soft x-ray absorption spectroscopy at the Ni L3,2 edge reveals the presence of a strong multiplet splitting in the tensile strained samples that progressively weakens with increasing compressive strain. Combined with cluster calculations, the results show how cumulatively enhanced covalency (i.e., bandwidth) between Ni d and O p orbital derived states leads to the emergent metallic ground state not attainable in the bulk ENO.

Original languageEnglish (US)
Article number075116
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - Aug 8 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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