Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides

A. A. Sirenko, A. Kazimirov, A. Ougazzaden, S. M. O'Malley, D. H. Bilderback, Z. H. Cai, B. Lai, R. Huang, V. K. Gupta, M. Chien, S. N.G. Chu

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Abstract

Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4%μm at the sidewalls.

Original languageEnglish (US)
Article number081111
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
StatePublished - Mar 3 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Sirenko, A. A., Kazimirov, A., Ougazzaden, A., O'Malley, S. M., Bilderback, D. H., Cai, Z. H., Lai, B., Huang, R., Gupta, V. K., Chien, M., & Chu, S. N. G. (2006). Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides. Applied Physics Letters, 88(8), [081111]. https://doi.org/10.1063/1.2177634