Structural anisotropy in a-Mgx Zn1-xO (0≤x≤0.33) films on r-sapphire

Gaurav Saraf, Theo Siegrist, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The a-plane Mgx Zn1-xO (0≤x≤0.25) films were grown on r-plane (011̄2) sapphire substrates using metal-organic chemical vapor deposition. Growth was done at temperatures from 520 °C, with a typical growth rate of ∼500 nm/h. Film thickness was varied by changes in deposition time, while Mg/Zn metal-organic flow was varied for changes in Mg composition. The a -plane films are dense and uniform. Strain anisotropy in the films was characterized by synchrotron x-ray diffraction. In-plane strain anisotropy increases with an increase in ZnO film thickness and reduces with an increase in Mg composition of Mgx Zn1-xO. The surface of the films characterized by atomic force microscopy showed rippled morphology with needles running along the surface. The morphology anisotropy in the films increases with an increase in ZnO film thickness and reduces with Mg composition of Mgx Zn1-xO films. The morphology anisotropy with ZnO film thickness and Mg composition of Mgx Zn1-xO is correlated with respective strain anisotropy variation.

Original languageEnglish (US)
Pages (from-to)1620-1624
Number of pages5
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume27
Issue number3
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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