Structural anisotropy in a-Mgx Zn1-xO (0≤x≤0.33) films on r-sapphire

Gaurav Saraf; Theo Siegrist; Yicheng Lu

doi:10.1116/1.3137013

Structural anisotropy in a-Mg_x Zn_1-xO (0≤x≤0.33) films on r-sapphire

Gaurav Saraf, Theo Siegrist, Yicheng Lu

Engn - Elec & Computer Engn

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The a-plane Mg_x Zn_1-xO (0≤x≤0.25) films were grown on r-plane (011̄2) sapphire substrates using metal-organic chemical vapor deposition. Growth was done at temperatures from 520 °C, with a typical growth rate of ∼500 nm/h. Film thickness was varied by changes in deposition time, while Mg/Zn metal-organic flow was varied for changes in Mg composition. The a -plane films are dense and uniform. Strain anisotropy in the films was characterized by synchrotron x-ray diffraction. In-plane strain anisotropy increases with an increase in ZnO film thickness and reduces with an increase in Mg composition of Mg_x Zn_1-xO. The surface of the films characterized by atomic force microscopy showed rippled morphology with needles running along the surface. The morphology anisotropy in the films increases with an increase in ZnO film thickness and reduces with Mg composition of Mg_x Zn_1-xO films. The morphology anisotropy with ZnO film thickness and Mg composition of Mg_x Zn_1-xO is correlated with respective strain anisotropy variation.

Original language	English (US)
Pages (from-to)	1620-1624
Number of pages	5
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	27
Issue number	3
DOIs	https://doi.org/10.1116/1.3137013
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Structural anisotropy in a-Mgx Zn1-xO (0≤x≤0.33) films on r-sapphire",

abstract = "The a-plane Mgx Zn1-xO (0≤x≤0.25) films were grown on r-plane (01{\=1}2) sapphire substrates using metal-organic chemical vapor deposition. Growth was done at temperatures from 520 °C, with a typical growth rate of ∼500 nm/h. Film thickness was varied by changes in deposition time, while Mg/Zn metal-organic flow was varied for changes in Mg composition. The a -plane films are dense and uniform. Strain anisotropy in the films was characterized by synchrotron x-ray diffraction. In-plane strain anisotropy increases with an increase in ZnO film thickness and reduces with an increase in Mg composition of Mgx Zn1-xO. The surface of the films characterized by atomic force microscopy showed rippled morphology with needles running along the surface. The morphology anisotropy in the films increases with an increase in ZnO film thickness and reduces with Mg composition of Mgx Zn1-xO films. The morphology anisotropy with ZnO film thickness and Mg composition of Mgx Zn1-xO is correlated with respective strain anisotropy variation.",

author = "Gaurav Saraf and Theo Siegrist and Yicheng Lu",

note = "Funding Information: This work has been supported by New Jersey Commission on Science and Technology (NJCST) and by Rutgers University{\textquoteright}s Academic Excellence Funds. The authors acknowledge the support of E. Demasi at NSLS in carrying out the synchrotron diffraction experiments.",

year = "2009",

doi = "10.1116/1.3137013",

language = "English (US)",

volume = "27",

pages = "1620--1624",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

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AU - Saraf, Gaurav

AU - Siegrist, Theo

AU - Lu, Yicheng

N1 - Funding Information: This work has been supported by New Jersey Commission on Science and Technology (NJCST) and by Rutgers University’s Academic Excellence Funds. The authors acknowledge the support of E. Demasi at NSLS in carrying out the synchrotron diffraction experiments.

PY - 2009

Y1 - 2009

N2 - The a-plane Mgx Zn1-xO (0≤x≤0.25) films were grown on r-plane (011̄2) sapphire substrates using metal-organic chemical vapor deposition. Growth was done at temperatures from 520 °C, with a typical growth rate of ∼500 nm/h. Film thickness was varied by changes in deposition time, while Mg/Zn metal-organic flow was varied for changes in Mg composition. The a -plane films are dense and uniform. Strain anisotropy in the films was characterized by synchrotron x-ray diffraction. In-plane strain anisotropy increases with an increase in ZnO film thickness and reduces with an increase in Mg composition of Mgx Zn1-xO. The surface of the films characterized by atomic force microscopy showed rippled morphology with needles running along the surface. The morphology anisotropy in the films increases with an increase in ZnO film thickness and reduces with Mg composition of Mgx Zn1-xO films. The morphology anisotropy with ZnO film thickness and Mg composition of Mgx Zn1-xO is correlated with respective strain anisotropy variation.

AB - The a-plane Mgx Zn1-xO (0≤x≤0.25) films were grown on r-plane (011̄2) sapphire substrates using metal-organic chemical vapor deposition. Growth was done at temperatures from 520 °C, with a typical growth rate of ∼500 nm/h. Film thickness was varied by changes in deposition time, while Mg/Zn metal-organic flow was varied for changes in Mg composition. The a -plane films are dense and uniform. Strain anisotropy in the films was characterized by synchrotron x-ray diffraction. In-plane strain anisotropy increases with an increase in ZnO film thickness and reduces with an increase in Mg composition of Mgx Zn1-xO. The surface of the films characterized by atomic force microscopy showed rippled morphology with needles running along the surface. The morphology anisotropy in the films increases with an increase in ZnO film thickness and reduces with Mg composition of Mgx Zn1-xO films. The morphology anisotropy with ZnO film thickness and Mg composition of Mgx Zn1-xO is correlated with respective strain anisotropy variation.

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