Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

Ying Chen; Gaurav Saraf; Pavel Ivanoff Reyes; Ziqing Duan; Jian Zhong; Yicheng Lu

doi:10.1116/1.3137014

Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

Ying Chen, Gaurav Saraf, Pavel Ivanoff Reyes, Ziqing Duan, Jian Zhong, Yicheng Lu

Engn - Elec & Computer Engn

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Epitaxial ZnO films were grown on c -plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled θ-2θ and φ -scans show that the n -type ZnO films have c -axis orientation and in-plane registry with the n -type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10-12 - 10-10 A) range under the reverse bias of less than 5 V, the on-off current ratio is ∼ 10⁷, and the ideality factor is ∼1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.

Original language	English (US)
Pages (from-to)	1631-1634
Number of pages	4
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	27
Issue number	3
DOIs	https://doi.org/10.1116/1.3137014
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{1da72d52788640b78b82b533a575a109,

title = "Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates",

abstract = "Epitaxial ZnO films were grown on c -plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled θ-2θ and φ -scans show that the n -type ZnO films have c -axis orientation and in-plane registry with the n -type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10-12 - 10-10 A) range under the reverse bias of less than 5 V, the on-off current ratio is ∼ 107, and the ideality factor is ∼1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.",

author = "Ying Chen and Gaurav Saraf and Reyes, {Pavel Ivanoff} and Ziqing Duan and Jian Zhong and Yicheng Lu",

note = "Funding Information: The authors want to acknowledge the II-VI Inc. for providing the substrates. This work was supported by NJCST with the Research Excellence Center grant.",

year = "2009",

doi = "10.1116/1.3137014",

language = "English (US)",

volume = "27",

pages = "1631--1634",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

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TY - JOUR

T1 - Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

AU - Chen, Ying

AU - Saraf, Gaurav

AU - Reyes, Pavel Ivanoff

AU - Duan, Ziqing

AU - Zhong, Jian

AU - Lu, Yicheng

N1 - Funding Information: The authors want to acknowledge the II-VI Inc. for providing the substrates. This work was supported by NJCST with the Research Excellence Center grant.

PY - 2009

Y1 - 2009

N2 - Epitaxial ZnO films were grown on c -plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled θ-2θ and φ -scans show that the n -type ZnO films have c -axis orientation and in-plane registry with the n -type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10-12 - 10-10 A) range under the reverse bias of less than 5 V, the on-off current ratio is ∼ 107, and the ideality factor is ∼1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.

AB - Epitaxial ZnO films were grown on c -plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled θ-2θ and φ -scans show that the n -type ZnO films have c -axis orientation and in-plane registry with the n -type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10-12 - 10-10 A) range under the reverse bias of less than 5 V, the on-off current ratio is ∼ 107, and the ideality factor is ∼1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.

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U2 - 10.1116/1.3137014

DO - 10.1116/1.3137014

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JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 3

ER -

Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

Abstract

All Science Journal Classification (ASJC) codes

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