Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

Ying Chen, Gaurav Saraf, Pavel Ivanoff Reyes, Ziqing Duan, Jian Zhong, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Epitaxial ZnO films were grown on c -plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled θ-2θ and φ -scans show that the n -type ZnO films have c -axis orientation and in-plane registry with the n -type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10-12 - 10-10 A) range under the reverse bias of less than 5 V, the on-off current ratio is ∼ 107, and the ideality factor is ∼1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.

Original languageEnglish (US)
Pages (from-to)1631-1634
Number of pages4
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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