Structure and stoichiometry of (0001) 4H-SiC/oxide interface

Xingguang Zhu; Hang Dong Lee; Tian Feng; Ayayi C. Ahyi; Daniel Mastrogiovanni; Alan Wan; Eric Garfunkel; John R. Williams; Torgny Gustafsson; Leonard C. Feldman

doi:10.1063/1.3481672

Structure and stoichiometry of (0001) 4H-SiC/oxide interface

Xingguang Zhu, Hang Dong Lee, Tian Feng, Ayayi C. Ahyi, Daniel Mastrogiovanni, Alan Wan, Eric Garfunkel, John R. Williams, Torgny Gustafsson, Leonard C. Feldman

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The 4H-SiC/SiO₂ interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8× 10¹⁴cm ^-2 from the oxide surface down to a few monolayers beneath the SiC/ SiO₂ interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.

Original language	English (US)
Article number	071908
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481672
State	Published - Aug 16 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3481672

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title = "Structure and stoichiometry of (0001) 4H-SiC/oxide interface",

abstract = "The 4H-SiC/SiO2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8× 1014cm -2 from the oxide surface down to a few monolayers beneath the SiC/ SiO2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.",

author = "Xingguang Zhu and Lee, {Hang Dong} and Tian Feng and Ahyi, {Ayayi C.} and Daniel Mastrogiovanni and Alan Wan and Eric Garfunkel and Williams, {John R.} and Torgny Gustafsson and Feldman, {Leonard C.}",

note = "Funding Information: We acknowledge useful discussions with S. T. Pantelides. This work is supported by ARL under Contract No. W911NF-07-2-0046 (Aivars Lelis, Technical Program Manager), TARDEC under Contract No. W56HZV-06-C-0228 (Terrence Burke, Technical Program Manager), NSF (Grant No. DMR 0706326) and by NSF GOALI under Grant No. DMR-0907385.",

year = "2010",

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doi = "10.1063/1.3481672",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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AU - Zhu, Xingguang

AU - Lee, Hang Dong

AU - Feng, Tian

AU - Ahyi, Ayayi C.

AU - Mastrogiovanni, Daniel

AU - Wan, Alan

AU - Garfunkel, Eric

AU - Williams, John R.

AU - Gustafsson, Torgny

AU - Feldman, Leonard C.

N1 - Funding Information: We acknowledge useful discussions with S. T. Pantelides. This work is supported by ARL under Contract No. W911NF-07-2-0046 (Aivars Lelis, Technical Program Manager), TARDEC under Contract No. W56HZV-06-C-0228 (Terrence Burke, Technical Program Manager), NSF (Grant No. DMR 0706326) and by NSF GOALI under Grant No. DMR-0907385.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - The 4H-SiC/SiO2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8× 1014cm -2 from the oxide surface down to a few monolayers beneath the SiC/ SiO2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.

AB - The 4H-SiC/SiO2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8× 1014cm -2 from the oxide surface down to a few monolayers beneath the SiC/ SiO2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.

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M1 - 071908

ER -

Structure and stoichiometry of (0001) 4H-SiC/oxide interface

Abstract

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