Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification

B. Etienne, E. Paris, C. Dorin, V. Thierry-Mieg, F. I.B. Williams, D. C. Glattly, G. Deville, E. Y. Andrei, O. Probst

Research output: Contribution to journalConference articlepeer-review

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Abstract

We discuss the current state of knowledge concerning the three following questions : i) what is the physical system most appropriate for the observation of the Wigner transition in an electron plasma? ii) how such a system can be optimized in order to limit competing effects like single-particle localization? iii) which experimental techniques allow unambiguous observation of this transition? We present the results concerning our study of dense quantum two-dimensional electron systems in low disordered selectively doped GaAs/GaAlAs heterojunctions and our evidences for a magnetically induced Wigner transition obtained concomitantly by resonant absorption of radio-frequency waves and by voltage-source transport measurements at low temperature and high magnetic field.

Original languageEnglish (US)
Pages (from-to)256-267
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1362
Issue numberpt 1
DOIs
StatePublished - 1991
Externally publishedYes
EventPhysical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger
Duration: Oct 28 1990Nov 2 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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