Abstract
We discuss the current state of knowledge concerning the three following questions : i) what is the physical system most appropriate for the observation of the Wigner transition in an electron plasma? ii) how such a system can be optimized in order to limit competing effects like single-particle localization? iii) which experimental techniques allow unambiguous observation of this transition? We present the results concerning our study of dense quantum two-dimensional electron systems in low disordered selectively doped GaAs/GaAlAs heterojunctions and our evidences for a magnetically induced Wigner transition obtained concomitantly by resonant absorption of radio-frequency waves and by voltage-source transport measurements at low temperature and high magnetic field.
Original language | English (US) |
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Pages (from-to) | 256-267 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1362 |
Issue number | pt 1 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |
Event | Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger Duration: Oct 28 1990 → Nov 2 1990 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering