Studies on MgxZn1-xO thin film resonator for mass sensor application

Ying Chen, Gaurav Saraf, Richard H. Wittstruck, Nuri W. Emanetoglu, Yicheng Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.

Original languageEnglish (US)
Title of host publication2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages142-145
Number of pages4
ISBN (Print)0780390539, 9780780390539
DOIs
StatePublished - Jan 1 2005
Event2005 Joint IEEE International Frequency Control Symposium (FCS) and Precise Time and Time Interval (PTTI) Systems and Applications Meeting - Vancouver, BC, Canada
Duration: Aug 29 2005Aug 31 2005

Publication series

NameProceedings of the IEEE International Frequency Control Symposium and Exposition
Volume2005

Other

Other2005 Joint IEEE International Frequency Control Symposium (FCS) and Precise Time and Time Interval (PTTI) Systems and Applications Meeting
CountryCanada
CityVancouver, BC
Period8/29/058/31/05

Fingerprint

Resonators
Thin films
Sensors
Acoustic wave velocity
Substrates
Zinc oxide
Acoustic bulk wave devices
Acoustic waves
Ternary alloys
Piezoelectric materials
Magnesia
Semiconductor devices
Chemical analysis
Field emission
Electron microscopy
Sputtering
Tungsten
Electric lines
Mirrors
Acoustics

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, Y., Saraf, G., Wittstruck, R. H., Emanetoglu, N. W., & Lu, Y. (2005). Studies on MgxZn1-xO thin film resonator for mass sensor application. In 2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting (pp. 142-145). [1573916] (Proceedings of the IEEE International Frequency Control Symposium and Exposition; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/FREQ.2005.1573916
Chen, Ying ; Saraf, Gaurav ; Wittstruck, Richard H. ; Emanetoglu, Nuri W. ; Lu, Yicheng. / Studies on MgxZn1-xO thin film resonator for mass sensor application. 2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 142-145 (Proceedings of the IEEE International Frequency Control Symposium and Exposition).
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title = "Studies on MgxZn1-xO thin film resonator for mass sensor application",
abstract = "Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.",
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Chen, Y, Saraf, G, Wittstruck, RH, Emanetoglu, NW & Lu, Y 2005, Studies on MgxZn1-xO thin film resonator for mass sensor application. in 2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting., 1573916, Proceedings of the IEEE International Frequency Control Symposium and Exposition, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 142-145, 2005 Joint IEEE International Frequency Control Symposium (FCS) and Precise Time and Time Interval (PTTI) Systems and Applications Meeting, Vancouver, BC, Canada, 8/29/05. https://doi.org/10.1109/FREQ.2005.1573916

Studies on MgxZn1-xO thin film resonator for mass sensor application. / Chen, Ying; Saraf, Gaurav; Wittstruck, Richard H.; Emanetoglu, Nuri W.; Lu, Yicheng.

2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting. Institute of Electrical and Electronics Engineers Inc., 2005. p. 142-145 1573916 (Proceedings of the IEEE International Frequency Control Symposium and Exposition; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Studies on MgxZn1-xO thin film resonator for mass sensor application

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AU - Lu, Yicheng

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N2 - Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.

AB - Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.

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Chen Y, Saraf G, Wittstruck RH, Emanetoglu NW, Lu Y. Studies on MgxZn1-xO thin film resonator for mass sensor application. In 2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting. Institute of Electrical and Electronics Engineers Inc. 2005. p. 142-145. 1573916. (Proceedings of the IEEE International Frequency Control Symposium and Exposition). https://doi.org/10.1109/FREQ.2005.1573916