TY - GEN
T1 - Studies on MgxZn1-xO thin film resonator for mass sensor application
AU - Chen, Ying
AU - Saraf, Gaurav
AU - Wittstruck, Richard H.
AU - Emanetoglu, Nuri W.
AU - Lu, Yicheng
PY - 2005
Y1 - 2005
N2 - Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.
AB - Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg xZn1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg xZn1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric MgxZn 1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode MgxZn1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO2) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented MgxZn1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the MgxZn1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of MgxZn1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm2/ng is demonstrated.
UR - https://www.scopus.com/pages/publications/33846573895
UR - https://www.scopus.com/pages/publications/33846573895#tab=citedBy
U2 - 10.1109/FREQ.2005.1573916
DO - 10.1109/FREQ.2005.1573916
M3 - Conference contribution
AN - SCOPUS:33846573895
SN - 0780390539
SN - 9780780390539
T3 - Proceedings of the IEEE International Frequency Control Symposium and Exposition
SP - 142
EP - 145
BT - 2005 Joint IEEE International Frequency Controlo Symposium (FCS) and Precise Tome and Time INterval (PTTI) Systems and Applications Meeting
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2005 Joint IEEE International Frequency Control Symposium (FCS) and Precise Time and Time Interval (PTTI) Systems and Applications Meeting
Y2 - 29 August 2005 through 31 August 2005
ER -