Abstract
Microstructural studies have been carried out on yttria doped zirconia (YDZ) thin films grown on MgO(100) and Ge(100) single crystal substrates using in-situ transmission electron microscopy. Microstructure evolution is strongly impeded in films grown on Ge (100) when thickness is less than 30 nm. Electrical studies show one order of enhancement in total conductivity in films of thickness less than 20 nm grown on MgO substrate. For 17 nm films that show enhanced conductivity, the activation energy obtained from electrical relaxation is ∼ 1.7 eV while it is ∼ 1.1 eV for 933 nm thick films.
Original language | English (US) |
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Pages (from-to) | 1234-1237 |
Number of pages | 4 |
Journal | Solid State Ionics |
Volume | 179 |
Issue number | 21-26 |
DOIs | |
State | Published - Sep 15 2008 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
Keywords
- Electron microscopy
- Ion transport
- Oxide
- Thin films