A systematic study of post-metallization annealing (PMA) effect on the quality of thermal SiO2 on p-type 6H-and 4H-SiC has been carried out. A simultaneous quasi-static hi-lo frequency capacitance-voltage method has been employed to measure the total effective oxide charge (JVeff) and interface state density (L>u). To ensure accurate results, Dit was measured at 350 °C which, depending on the hole capture cross sections, should enable the measurement of interface states located in the band gap as deep as 1.3-1.5 eV from the valence band edge. The dependence of Neg and Dit on annealing temperature and ambient as well as the effect of thermal and sputtered gate metal on the oxide quality will be reported. It will be shown that Neff values close to the detection limit due to the uncertainty in SiC electron affinities and Dit values below l × 1011 cm-2/eV deep in the band gap can be reproducibly obtained for both p-type 6H- and 4H-SiC.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Interface defects
- Oxide charge