Study of interface state density and effective oxide charge in post-metallization annealed SiO2/SiC structures

John Campi; Yan Shi; Yanbin Luo; Feng Yan; Jian H. Zhao

doi:10.1109/16.748870

Study of interface state density and effective oxide charge in post-metallization annealed SiO₂/SiC structures

John Campi, Yan Shi, Yanbin Luo, Feng Yan, Jian H. Zhao

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

A systematic study of post-metallization annealing (PMA) effect on the quality of thermal SiO₂ on p-type 6H-and 4H-SiC has been carried out. A simultaneous quasi-static hi-lo frequency capacitance-voltage method has been employed to measure the total effective oxide charge (JVeff) and interface state density (L>u). To ensure accurate results, D_it was measured at 350 °C which, depending on the hole capture cross sections, should enable the measurement of interface states located in the band gap as deep as 1.3-1.5 eV from the valence band edge. The dependence of N_eg and D_it on annealing temperature and ambient as well as the effect of thermal and sputtered gate metal on the oxide quality will be reported. It will be shown that N_eff values close to the detection limit due to the uncertainty in SiC electron affinities and D_it values below l × 10¹¹ cm^-2/eV deep in the band gap can be reproducibly obtained for both p-type 6H- and 4H-SiC.

Original language	English (US)
Pages (from-to)	511-519
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	3
DOIs	https://doi.org/10.1109/16.748870
State	Published - 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Interface defects
Mosfet's
Oxide charge
SiC

Access to Document

10.1109/16.748870

Cite this

@article{2a5506caa6a7466c9ab0d9655e6e021d,

title = "Study of interface state density and effective oxide charge in post-metallization annealed SiO2/SiC structures",

abstract = "A systematic study of post-metallization annealing (PMA) effect on the quality of thermal SiO2 on p-type 6H-and 4H-SiC has been carried out. A simultaneous quasi-static hi-lo frequency capacitance-voltage method has been employed to measure the total effective oxide charge (JVeff) and interface state density (L>u). To ensure accurate results, Dit was measured at 350 °C which, depending on the hole capture cross sections, should enable the measurement of interface states located in the band gap as deep as 1.3-1.5 eV from the valence band edge. The dependence of Neg and Dit on annealing temperature and ambient as well as the effect of thermal and sputtered gate metal on the oxide quality will be reported. It will be shown that Neff values close to the detection limit due to the uncertainty in SiC electron affinities and Dit values below l × 1011 cm-2/eV deep in the band gap can be reproducibly obtained for both p-type 6H- and 4H-SiC.",

keywords = "Interface defects, Mosfet's, Oxide charge, SiC",

author = "John Campi and Yan Shi and Yanbin Luo and Feng Yan and Zhao, {Jian H.}",

note = "Funding Information: Manuscript received November 13, 1998; revised November 13, 1998. This work was supported in part by NSF (ECS95-22634), DARPA (MDA972-94-2-0004 Mod 11) managed by Electricore, and the SiC Power Device Research Consortium funded by DARPA, EPRI, and Baltimore Gas and Electricity. The review of this paper was arranged by Editor J. W. Palmour.",

year = "1999",

doi = "10.1109/16.748870",

language = "English (US)",

volume = "46",

pages = "511--519",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

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TY - JOUR

T1 - Study of interface state density and effective oxide charge in post-metallization annealed SiO2/SiC structures

AU - Campi, John

AU - Shi, Yan

AU - Luo, Yanbin

AU - Yan, Feng

AU - Zhao, Jian H.

N1 - Funding Information: Manuscript received November 13, 1998; revised November 13, 1998. This work was supported in part by NSF (ECS95-22634), DARPA (MDA972-94-2-0004 Mod 11) managed by Electricore, and the SiC Power Device Research Consortium funded by DARPA, EPRI, and Baltimore Gas and Electricity. The review of this paper was arranged by Editor J. W. Palmour.

PY - 1999

Y1 - 1999

N2 - A systematic study of post-metallization annealing (PMA) effect on the quality of thermal SiO2 on p-type 6H-and 4H-SiC has been carried out. A simultaneous quasi-static hi-lo frequency capacitance-voltage method has been employed to measure the total effective oxide charge (JVeff) and interface state density (L>u). To ensure accurate results, Dit was measured at 350 °C which, depending on the hole capture cross sections, should enable the measurement of interface states located in the band gap as deep as 1.3-1.5 eV from the valence band edge. The dependence of Neg and Dit on annealing temperature and ambient as well as the effect of thermal and sputtered gate metal on the oxide quality will be reported. It will be shown that Neff values close to the detection limit due to the uncertainty in SiC electron affinities and Dit values below l × 1011 cm-2/eV deep in the band gap can be reproducibly obtained for both p-type 6H- and 4H-SiC.

AB - A systematic study of post-metallization annealing (PMA) effect on the quality of thermal SiO2 on p-type 6H-and 4H-SiC has been carried out. A simultaneous quasi-static hi-lo frequency capacitance-voltage method has been employed to measure the total effective oxide charge (JVeff) and interface state density (L>u). To ensure accurate results, Dit was measured at 350 °C which, depending on the hole capture cross sections, should enable the measurement of interface states located in the band gap as deep as 1.3-1.5 eV from the valence band edge. The dependence of Neg and Dit on annealing temperature and ambient as well as the effect of thermal and sputtered gate metal on the oxide quality will be reported. It will be shown that Neff values close to the detection limit due to the uncertainty in SiC electron affinities and Dit values below l × 1011 cm-2/eV deep in the band gap can be reproducibly obtained for both p-type 6H- and 4H-SiC.

KW - Interface defects

KW - Mosfet's

KW - Oxide charge

KW - SiC

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