Sub-1-K operation of SiGe transistors and circuits

Laleh Najafizadeh, Joseph S. Adams, Stanley D. Phillips, Kurt A. Moen, John D. Cressler, Shahid Aslam, Thomas R. Stevenson, Robert M. Meloy

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 × 2.5 × 4 μm2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/°C over the temperature range of 700 mK-300 K.

Original languageEnglish (US)
Pages (from-to)508-510
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number5
DOIs
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Analog integrated circuits
  • BiCMOS
  • Cryogenic temperatures
  • Heterojunction bipolar transistor (HBT)
  • SiGe HBTs
  • Silicon germanium (SiGe)
  • Voltage reference

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