Sub-1-K operation of SiGe transistors and circuits

Laleh Najafizadeh; Joseph S. Adams; Stanley D. Phillips; Kurt A. Moen; John D. Cressler; Shahid Aslam; Thomas R. Stevenson; Robert M. Meloy

doi:10.1109/LED.2009.2016767

Sub-1-K operation of SiGe transistors and circuits

Laleh Najafizadeh
, Joseph S. Adams
, Stanley D. Phillips
, Kurt A. Moen
, John D. Cressler
, Shahid Aslam
, Thomas R. Stevenson
, Robert M. Meloy

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 × 2.5 × 4 μm² SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/°C over the temperature range of 700 mK-300 K.

Original language	English (US)
Pages (from-to)	508-510
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2016767
State	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Analog integrated circuits
BiCMOS
Cryogenic temperatures
Heterojunction bipolar transistor (HBT)
SiGe HBTs
Silicon germanium (SiGe)
Voltage reference

Access to Document

10.1109/LED.2009.2016767

Cite this

@article{0a1e7f8543eb4aa9ba3c6b20caad5048,

title = "Sub-1-K operation of SiGe transistors and circuits",

abstract = "We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 × 2.5 × 4 μm2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/°C over the temperature range of 700 mK-300 K.",

keywords = "Analog integrated circuits, BiCMOS, Cryogenic temperatures, Heterojunction bipolar transistor (HBT), SiGe HBTs, Silicon germanium (SiGe), Voltage reference",

author = "Laleh Najafizadeh and Adams, \{Joseph S.\} and Phillips, \{Stanley D.\} and Moen, \{Kurt A.\} and Cressler, \{John D.\} and Shahid Aslam and Stevenson, \{Thomas R.\} and Meloy, \{Robert M.\}",

note = "Funding Information: Manuscript received January 15, 2009; revised February 21, 2009. Current version published April 28, 2009. This work was supported by the National Aeronautics and Space Administration. The review of this letter was arranged by Editor M. Ostling.",

year = "2009",

doi = "10.1109/LED.2009.2016767",

language = "English (US)",

volume = "30",

pages = "508--510",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Sub-1-K operation of SiGe transistors and circuits

AU - Najafizadeh, Laleh

AU - Adams, Joseph S.

AU - Phillips, Stanley D.

AU - Moen, Kurt A.

AU - Cressler, John D.

AU - Aslam, Shahid

AU - Stevenson, Thomas R.

AU - Meloy, Robert M.

N1 - Funding Information: Manuscript received January 15, 2009; revised February 21, 2009. Current version published April 28, 2009. This work was supported by the National Aeronautics and Space Administration. The review of this letter was arranged by Editor M. Ostling.

PY - 2009

Y1 - 2009

N2 - We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 × 2.5 × 4 μm2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/°C over the temperature range of 700 mK-300 K.

AB - We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 × 2.5 × 4 μm2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/°C over the temperature range of 700 mK-300 K.

KW - Analog integrated circuits

KW - BiCMOS

KW - Cryogenic temperatures

KW - Heterojunction bipolar transistor (HBT)

KW - SiGe HBTs

KW - Silicon germanium (SiGe)

KW - Voltage reference

UR - https://www.scopus.com/pages/publications/67349278015

UR - https://www.scopus.com/pages/publications/67349278015#tab=citedBy

U2 - 10.1109/LED.2009.2016767

DO - 10.1109/LED.2009.2016767

M3 - Article

AN - SCOPUS:67349278015

SN - 0741-3106

VL - 30

SP - 508

EP - 510

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Sub-1-K operation of SiGe transistors and circuits

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this