Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layers

Loren Pfeiffer, G. K. Celler, T. Kovacs, McD Robinson

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27-μm-thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.

Original languageEnglish (US)
Pages (from-to)1048-1050
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number11
DOIs
StatePublished - Dec 1 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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