Surface and interface properties of metal-organic chemical vapor deposition grown a-plane Mg xZn 1-xO (0 ≤ x ≤ 0.3) films

Gaurav Saraf, Jian Zhong, Olga Dulub, Ulrike Diebold, Theo Siegrist, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The a-plane Mg x Zn 1-x O (00 ≤ x ≤ 0.3) films were grown on r-plane (011̄2) sapphire substrates using metal-organic chemical vapor deposition (MOCVD). Growth was done at temperatures from 450°C to 500°C, with a typical growth rate of ∼500 nm/h. Field emission scanning electron microscopy (FESEM) images show that the films are smooth and dense. X-ray diffraction (XRD) scans confirm good crystallinity of the films. The interface of Mg x Zn 1-x O films with r-sapphire was found to be semicoherent as characterized by high-resolution transmission electron microscopy (HRTEM). The Mg x Zn 1-x O surfaces were characterized using scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) shows well-ordered and single-crystalline surfaces. The films have a characteristic wavelike surface morphology with needle-shaped domains running predominantly along the crystallographic c-direction. Photoluminescence (PL) measurements show a strong near-band-edge emission without observable deep level emission, indicating a low defect concentration. In-plane optical anisotropic transmission was observed by polarized transmission measurements.

Original languageEnglish (US)
Pages (from-to)446-451
Number of pages6
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Anisotropy
  • Mg Zn O
  • Nonpolar
  • Photoluminescence (PL)
  • Scanning tunneling microscopy (STM)
  • Transmission electron microscopy (TEM)

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