Surface photochemistry of divalent metal alkyls on SiO2

Ping S. Shaw, Esaul Sanchez, James A. O'Neill, Zhen Wu, B. M. Osgood

Research output: Contribution to journalArticle

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Abstract

Metal-alkyl molecules adsorbed on chemically prepared silicon surfaces have been studied using infrared total-internal reflection and ultraviolet transmission spectroscopies, temperature-programmed desorption spectroscopy (TPD), and mass spectroscopy of laser induced desorption (LID) products. For chemisorbed species, the surface hydroxyl groups have been shown to be the prime adsorption sites. In addition, we determined the identity of the chemisorbed species and their fragments under ultraviolet photodissociation. Surface photodissociation was observed to be strongly wavelength dependent at 193 and 248 nm.

Original languageEnglish (US)
Pages (from-to)1643-1652
Number of pages10
JournalThe Journal of Chemical Physics
Volume94
Issue number2
DOIs
Publication statusPublished - Jan 1 1991
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Shaw, P. S., Sanchez, E., O'Neill, J. A., Wu, Z., & Osgood, B. M. (1991). Surface photochemistry of divalent metal alkyls on SiO2. The Journal of Chemical Physics, 94(2), 1643-1652. https://doi.org/10.1063/1.459968