Surface topography changes induced by chemical vapor deposition of aluminum on Al(111)

B. J. Hinch; R. B. Doak; L. H. Dubois

doi:10.1016/0039-6028(93)90410-L

Surface topography changes induced by chemical vapor deposition of aluminum on Al(111)

B. J. Hinch, R. B. Doak, L. H. Dubois

School of Arts and Sciences, Chemistry & Chemical Biology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.

Original language	English (US)
Pages (from-to)	261-274
Number of pages	14
Journal	Surface Science
Volume	286
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(93)90410-L
State	Published - May 1 1993

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(93)90410-L

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abstract = "Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.",

author = "Hinch, {B. J.} and Doak, {R. B.} and Dubois, {L. H.}",

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AU - Doak, R. B.

AU - Dubois, L. H.

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N2 - Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.

AB - Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.

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