Surface topography changes induced by chemical vapor deposition of aluminum on Al(111)

B. J. Hinch, R. B. Doak, L. H. Dubois

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.

Original languageEnglish (US)
Pages (from-to)261-274
Number of pages14
JournalSurface Science
Volume286
Issue number3
DOIs
StatePublished - May 1 1993

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Surface topography changes induced by chemical vapor deposition of aluminum on Al(111)'. Together they form a unique fingerprint.

Cite this