Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111) surface, using trimethylamine alane (TMAA). The precursor dissociates on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scattering. Growth at 400 K proceeds by a step-flow mechanism.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry