Switching characteristics of a high-temperature 6H-SiC thyristor

K. Xie, W. R. Buchwald, J. H. Zhao, J. R. Flemish, T. Burke, L. Kingsley, M. Weiner, H. Singh

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

Two different 6H-SiC thyristors, one with a 6.5 μm n-type blocking layer and the other with a 8 μm p-type blocking layer have been fabricated and characterized. The transient switching characteristics of these SiC thyristors were investigated using both optical and electrical gate triggering. A forward breakover voltage of 100 V for the thyristor with the n-type blocking layer and 600 V for the thyristor with p-type blocking layer are reported. The maximum switched current density as high as 2000 A/cm2 is demonstrated in the SiC thyristor with n-type blocking layer. The forward breakover voltage of the 100 V thyristor is found to decrease by only 20% when operating temperature is increased from room temperature to 300 °C, while the rise time increases from 43 ns to 195 ns.

Original languageEnglish (US)
Pages (from-to)415-418
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 11 1994Dec 14 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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