TY - JOUR
T1 - Symmorphic Intersecting Nodal Rings in Semiconducting Layers
AU - Gong, Cheng
AU - Xie, Yuee
AU - Chen, Yuanping
AU - Kim, Heung Sik
AU - Vanderbilt, David
N1 - Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/3/9
Y1 - 2018/3/9
N2 - The unique properties of topological semimetals have strongly driven efforts to seek for new topological phases and related materials. Here, we identify a critical condition for the existence of intersecting nodal rings (INRs) in symmorphic crystals, and further classify all possible kinds of INRs which can be obtained in the layered semiconductors with Amm2 and Cmmm space group symmetries. Several honeycomb structures are suggested to be topological INR semimetals, including layered and "hidden" layered structures. Transitions between the three types of INRs, named as α, β, and γ type, can be driven by external strains in these structures. The resulting surface states and Landau-level structures, more complicated than those resulting from a simple nodal loop, are also discussed.
AB - The unique properties of topological semimetals have strongly driven efforts to seek for new topological phases and related materials. Here, we identify a critical condition for the existence of intersecting nodal rings (INRs) in symmorphic crystals, and further classify all possible kinds of INRs which can be obtained in the layered semiconductors with Amm2 and Cmmm space group symmetries. Several honeycomb structures are suggested to be topological INR semimetals, including layered and "hidden" layered structures. Transitions between the three types of INRs, named as α, β, and γ type, can be driven by external strains in these structures. The resulting surface states and Landau-level structures, more complicated than those resulting from a simple nodal loop, are also discussed.
UR - http://www.scopus.com/inward/record.url?scp=85043698376&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85043698376&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.120.106403
DO - 10.1103/PhysRevLett.120.106403
M3 - Article
C2 - 29570330
AN - SCOPUS:85043698376
SN - 0031-9007
VL - 120
JO - Physical review letters
JF - Physical review letters
IS - 10
M1 - 106403
ER -