Symmorphic Intersecting Nodal Rings in Semiconducting Layers

Cheng Gong, Yuee Xie, Yuanping Chen, Heung Sik Kim, David Vanderbilt

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

The unique properties of topological semimetals have strongly driven efforts to seek for new topological phases and related materials. Here, we identify a critical condition for the existence of intersecting nodal rings (INRs) in symmorphic crystals, and further classify all possible kinds of INRs which can be obtained in the layered semiconductors with Amm2 and Cmmm space group symmetries. Several honeycomb structures are suggested to be topological INR semimetals, including layered and "hidden" layered structures. Transitions between the three types of INRs, named as α, β, and γ type, can be driven by external strains in these structures. The resulting surface states and Landau-level structures, more complicated than those resulting from a simple nodal loop, are also discussed.

Original languageEnglish (US)
Article number106403
JournalPhysical review letters
Volume120
Issue number10
DOIs
StatePublished - Mar 9 2018

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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