Temperature compensation of SAW in ZnO/SiO2/Si structure

P. Wu, N. W. Emanetoglu, X. Tong, Y. Lu

Research output: Contribution to journalConference articlepeer-review

22 Scopus citations

Abstract

Temperature stability is a critical issue for SAW devices in communication and sensor applications. The negative temperature coefficient of delay (TCD) of SiO2 makes it suitable as a compensation layer in multilayer structures where the piezoelectric layer possesses a positive TCD. In this work, the SAW propagation properties, including velocity dispersion, electro-mechanical coupling coefficients, and propagation attenuation in ZnO/SiO2/Si structures are investigated using the transfer matrix method. For different thickness ratios of ZnO to SiO2, temperature compensation of the second GSAW modes at frequencies in the range of 1GHz to 3 GHz is calculated. The simulation results show good temperature stability at 2.4 GHz when the ZnO:SiO2 thickness ratio is 2:3 and total film thickness is 3 μ m.

Original languageEnglish (US)
Pages (from-to)211-214
Number of pages4
JournalProceedings of the IEEE Ultrasonics Symposium
Volume1
StatePublished - 2001
Event2001 Ultrasonics Symposium - Atlanta, GA, United States
Duration: Oct 6 2001Oct 10 2001

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

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