Temperature-dependent leakage current behavior of epitaxial Bi 0.5Na0.5TiO3-based thin films made by pulsed laser deposition

M. M. Hejazi, Ahmad Safari

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This paper discusses the electrical conduction mechanisms in a 0.88 Bi 0.5Na0.5TiO3-0.08 Bi0.5K 0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO 3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

Original languageEnglish (US)
Article number103710
JournalJournal of Applied Physics
Volume110
Issue number10
DOIs
StatePublished - Nov 15 2011

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pulsed laser deposition
leakage
traps
thin films
triangles
temperature
conduction
electric fields
temperature measurement
charge carriers
space charge
slopes
activation energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Temperature-dependent leakage current behavior of epitaxial Bi 0.5Na0.5TiO3-based thin films made by pulsed laser deposition. / Hejazi, M. M.; Safari, Ahmad.

In: Journal of Applied Physics, Vol. 110, No. 10, 103710, 15.11.2011.

Research output: Contribution to journalArticle

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