Temperature versus concentration phase diagram of Mg- And Si-doped CuGeO3

T. Masuda, K. Ina, K. Hadama, I. Tsukada, K. Uchinokura, H. Nakao, M. Nishi, Y. Fujii, K. Hirota, G. Shirane, Y. J. Wang, V. Kiryukhin, R. J. Birgeneau

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We studied the temperature versus concentration (T-x) phase diagram in Cu1-xMgxGeO3 by susceptibility measurements, synchrotron X-ray diffraction and neutron diffraction and the first-order phase transition between dimerizedantiferromagnetic and uniform-antiferromagnetic phases reported by Masuda et al. [Phys. Rev. Lett. 80 (1998) 4566] was established. We found that the T-x phase diagram of Cu1-xMxGeO3 (M = Zn,Ni) is similar to that of Cu1-xMgxGeO3, while that of CuGe1-xSixO3 is qualitatively different.

Original languageEnglish (US)
Pages (from-to)1637-1638
Number of pages2
JournalPhysica B: Condensed Matter
Issue numberPART II
StatePublished - 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


  • CuGeO
  • First-order phase transition
  • Spin-peierls transition


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