The change in the mechanism of the porous silicon formation during anodic polarization

S. A. Gavrilov, T. N. Zavaritskaya, V. A. Karavanskii, N. N. Mel'nik, V. V. Podzorov, I. N. Sorokina

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Abstract

Formation of layers with different microstructures and photoluminescence properties during anodizing under fixed conditions is found to be determined by a change in the mechanism of the porous silicon formation. The change in the mechanism is satisfactorily explained by the kinetics of mass transfer of the reagents and products to the front of the electrochemical reaction. The relation between structural and luminescence properties of separate film layers agrees with the quantum size model for porous silicon.

Original languageEnglish (US)
Pages (from-to)985-989
Number of pages5
JournalRussian Journal of Electrochemistry
Volume33
Issue number9
StatePublished - Sep 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrochemistry

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  • Cite this

    Gavrilov, S. A., Zavaritskaya, T. N., Karavanskii, V. A., Mel'nik, N. N., Podzorov, V. V., & Sorokina, I. N. (1997). The change in the mechanism of the porous silicon formation during anodic polarization. Russian Journal of Electrochemistry, 33(9), 985-989.